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The addition of a small percentage of impurities (foreign atoms) into the regular crystal lattice of silicon alters its electrical properties. N-type and P-type semiconductors are produced using this process. Impurity atoms with five valence electrons produce n-type semiconductors by providing extra electrons. Impurity atoms with three valence electrons produce p-type semiconductors by generating "holes" (absences of electrons). These impurity atoms can occupy vacant sites in the crystal lattice, which are naturally present. Another possibility is interstitial diffusion, where the impurity atoms move between the silicon atoms in the crystal lattice. The impurity atoms can also replace the silicon atoms in the crystal lattice, functioning as substitutional atoms.
